RF switches are components used for switching the signal paths of high frequency circuits in wireless communication devices SPDT, DPDT , SP4T, SP6T, SP8T, and SP10T mechanical and solid state RF switches for 50-ohm and 75-ohm systems spanning DC to 26.5 GHz

Piezoelectric versus electrostatic actuation for a capacitive RF-MEMS switch
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CALCULATIONS The mechanical part of the RF switch is modelled by a cantilever beam, as shown in Figure 2. 631 Page 2. Figure 2: Cantilever models for electrostatic and piezoelectric actuation The expression

Improvements in GeTe-based inline phase-change switch technology for RF switching applications
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Keywords: GeTe, IPCS, TOI, RFSwitch Phase-Change Abstract An inline chalcogenide phase-change radiofrequency ( RF ) switch using germanium telluride and driven by an integrated, electrically isolated thin-film heater for thermal actuation has been fabricated

Performance of double-pole four-throw double-gate RF CMOS switch in 45-nm technology
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implemented with 45-nm CMOS process technology. This proposed RFswitch is capable to select the data streams from the two antennas for both the transmitting and re- ceiving processes. For the development of this DP4T

High performance SOI RF switch for healthcare application
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ABSTRACT The objective of this research was to design a 0-5 GHz RF SOI switch, with 0.18 um power Jazz SOI technology by using Cadence software, for health care applications. The ultimate goal for such application is minimize the trade-offs between performance and cost,

An ultra-low power InAs/AlSb HEMT X-band low-noise amplifier and RF switch
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AbstractSeveral antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch using 0.1- m gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated

A review paper on RF MEMS switch for wireless communication
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Also explains the dominance of RF Switch over existing devices like PIN Diodes and Field-Effect- Transistors with size, power, isolation, insertion loss, and graphically how Pull-in voltage affects on the tip deflection of the switch

Development of high power X-band semiconductor RF switch for pulse compression systems of future linear colliders
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Abstract We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. We describe the design methodology of the architecture of the whole switch systems. We

Capacitive model and S-parameters of double-pole four-throw double-gate RF CMOS switch
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switch whatever they are ON or OFF. Keywords: Capacitive Model, Double-Gate MOSFET, DP4T Switch, Isolation, Radio Frequency, RFSwitch S-Parameter and VLSI 1. Introduction Continuous scaling of CMOS technology has

Design and simulation of RF MEMS capacitive type shunt switchits major applications
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www.iosrjournals.org 64 | Page 4.1 2.5- D and 3-D Simulation of RFSwitch Upstate Simulation: The switch structure is simulated in the upstate position by the ADS and HFSS simulatorsFig. 5 RFswitch structure in HFSS Simulator Page 6

RF MEMS switch technology for radio front end applications
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Removes performance objection to converged architecture MEMS RFswitch has superior Isolation/Harmonics Performance (>15dB compared with solid state)MEMS RFSwitch Is cost competitive to pHEMTin multi-throw application Lower harmonics, 10-15 dB

Parametric optimization of symmetric toggle RF MEMS switch for X-band applications
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Keywords: Symmetric Toggle Switch, RFswitch insertion loss, isolation, hafnium oxide. I. INTRODUCTIONFig. 7 shows the schematic view of fabrication flow for RFswitch . The surface micro- machined devices are fabricated on high resistivity silicon substrates

Effect of multilayer structure on electromechanical characteristics of RF MEMS capacitive Symmetric Toggle Switch for X-band applications
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Fig. 3 shows the schematic view of process flow for the RFswitch fabricationNext, a low temperature LPCVD oxide is deposited and the via holes are patterned on it. Since the switching structural elements are Figure 3: Schematic view of Process flow for RFswitch . (a) (b)

A prototype magnetically actuated MEMS RF switch
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Abstract The design, fabrication and testing of an electromagnetically driven MEMS actuator and its application for an X-band airborne radar system is presented. A classicpot core comprising of a conducting copper coil and a magnetically soft mover has been

S-Parameters Allow High-Frequency Verification of RF Switch Models
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Introduction to S-Parameters S (scattering) parameters are used to characterize electrical networks using matched impedances. Here, scattering refers to the way traveling currents or voltages are affected when they meet a discontinuity in a transmission line. S-parameters

Bi-stable RF MEMS switch with low actuation voltage
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past. In the past few years work has been done to use MEMS technologies in designing and fabricating an RFswitch that would in many ways replace the electronic and mechanical switches that have been used for so long

Low actuation voltage RF MEMS switch using varying section composite fixed-fixed beam
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pitting and hardening damage of contact area due to repetitive contact. Hence, pure Au is not suitable for RFswitch applications that require long cycling lifetime. On the other hand, hard metals like tungsten and molybdenum

RF MEMS Switches and Switch Matrices
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There are two principle applications which reflect the opposite extremes of the RF switch market. First, there is the satellite application which requires the use of large switch matrices that demand the highest switching performance

COMMENT rf-components